FQA8N100
Non-returnable
These N-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe,
DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies.
₹150.00
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Product Details
8A, 1000V, RDS(on)= 1.45Ω@VGS= 10 V
1.Low gate charge (typical 53 nC)
2.Low Crss(typical 16 pF)
3.Fast switching
4.100% avalanche tested
5.Improved dv/dt capability