These N-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe,
DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies.
8A, 1000V, RDS(on)= 1.45Ω@VGS= 10 V
1.Low gate charge (typical 53 nC)
2.Low Crss(typical 16 pF)
4.100% avalanche tested
5.Improved dv/dt capability